Home > Electronic Components > HIGH VOLTAGE DIODES > [electronic] 2CLG1020 high voltage high voltage diode GERT 20KV1.0A high-voltage silicon stack
  • [electronic] 2CLG1020 high voltage high voltage diode GERT 20KV1.0A high-voltage silicon stack
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  • [electronic] 2CLG1020 high voltage high voltage diode GERT 20KV1.0A high-voltage silicon stack

[electronic] 2CLG1020 high voltage high voltage diode GERT 20KV1.0A high-voltage silicon stack

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[electronic] 2CLG1020 high voltage high voltage diode GERT 20KV1.0A high-voltage silicon stack
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  • [electronic] 2CLG1020 high voltage high voltage diode GERT 20KV1.0A high-voltage silicon stack
  • [electronic] 2CLG1020 high voltage high voltage diode GERT 20KV1.0A high-voltage silicon stack
1/1
  • [electronic] 2CLG1020 high voltage high voltage diode GERT 20KV1.0A high-voltage silicon stack
  • Description

2CLG1020parameter table Datasheet:

Model Type

2CLG1020

Manufacturer Manufacturer

HVGT

Reverse repetitive peak voltage VRRM

20KV

Forward average cuRRent IF(AV)

1.0A

Forward non repetitive surge current IFSM

30A

Positive peak voltage IF=10 (mA) VFM

25

Reverse direct currentVR=VRRM(kV) IRTa=25 C

5uA

Reverse recovery time Trr

100nS

Reverse direct currentVR=VRRM(kV) IRToil=100 C

50uA

PN Junction capacitance CJ

-

Working temperature Tj

-40~125C

Storage temperature TSTG

-40~125 C

Outline dimension Size: Shape (mm Unit:)

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