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[electronic] high voltage high voltage diode G25FP GERT G25FP 10mA 25kV high voltage silicon stack

17010153533
[electronic] high voltage high voltage diode G25FP GERT G25FP 10mA 25kV high voltage silicon stack
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  • Description
  • Reviews(149)
Specifications
brand HVGT

 

G25FPParameter table Datasheet:

Model Type

G25FP

Manufacturer Manufacturer

HVGT

Reverse repetitive peak voltage VRRM

25kV

Forward average cuRRent IF(AV)

10mA

Forward non repetitive surge current IFSM

0.8A

Positive peak voltage IF=10 (mA) VFM

55V

Reverse direct currentVR=VRRM(kV) IRTa=25 C

2uA

Reverse recovery time Trr

100nS

Reverse direct currentVR=VRRM(kV) IRToil=100 C

5uA

PN Junction capacitance CJ

-

Working temperature Tj

-40~125C

Storage temperature TSTG

-40~125 C

Outline dimension Size: Shape (mm Unit:)

 

 

 

Average rating: 5.0 based on 149 reviews
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