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[electronic] HV10G10 high voltage high voltage diode GERT 10mA10kV high-voltage silicon stack

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[electronic] HV10G10 high voltage high voltage diode GERT 10mA10kV high-voltage silicon stack
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  • Description
  • Reviews(78)
Specifications
brand HVGT

HV10G10parameter table Datasheet:

Model Type

HV10G10

Manufacturer Manufacturer

HVGT

Reverse repetitive peak voltage VRRM

10kV

Forward average cuRRent IF(AV)

10mA

Forward non repetitive surge current IFSM

1.0A

Positive peak voltage IF=2 (mA) VFM

30V

Reverse direct currentVR=VRRM(kV) IRTa=25 C

2.0uA

Reverse recovery time Trr

100nS

Reverse direct currentVR=VRRM(kV) IRToil=100 C

5.0uA

PN Junction capacitance CJ

1.0pF

Working temperature Tj

-40~125C

Storage temperature TSTG

-40~125 C

Outline dimension Size: Shape (mm Unit:)

 

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