Home > Electronic Components > HIGH VOLTAGE DIODES > [electronic] HV10G20 high voltage high voltage diode GERT 10mA 20kV high-voltage silicon stack
  • [electronic] HV10G20 high voltage high voltage diode GERT 10mA 20kV high-voltage silicon stack
1/1
  • [electronic] HV10G20 high voltage high voltage diode GERT 10mA 20kV high-voltage silicon stack

[electronic] HV10G20 high voltage high voltage diode GERT 10mA 20kV high-voltage silicon stack

SKU:
[electronic] HV10G20 high voltage high voltage diode GERT 10mA 20kV high-voltage silicon stack
4.6 (50 Reviews)
5 Sold
$1.25 $1.14
Received successfully
Coupon Code
CONTINUE SHOPPING
Discount
  • GET $2.00 OFF ON ORDERS OVER $49.00
  • GET $4.00 OFF ON ORDERS OVER $79.00
  • GET $6.00 OFF ON ORDERS OVER $109.00
  • GET $8.00 OFF ON ORDERS OVER $139.00
  • GET $10.00 OFF ON ORDERS OVER $169.00
  • GET $12.00 OFF ON ORDERS OVER $199.00
  • GET $19.00 OFF ON ORDERS OVER $299.00
  • View More
  • View Less
Quantity:
-
+
  • [electronic] HV10G20 high voltage high voltage diode GERT 10mA 20kV high-voltage silicon stack
  • [electronic] HV10G20 high voltage high voltage diode GERT 10mA 20kV high-voltage silicon stack
1/1
  • [electronic] HV10G20 high voltage high voltage diode GERT 10mA 20kV high-voltage silicon stack
  • Description
brand HVGT

HV10G20 parameter table Datasheet:

Model Type

HV10G20

Manufacturer Manufacturer

HVGT

Reverse repetitive peak voltage VRRM

20kV

Forward average cuRRent IF(AV)

10mA

Forward non repetitive surge current IFSM

0.8A

Positive peak voltage IF=10 (mA) VFM

55V

Reverse direct currentVR=VRRM(kV) IRTa=25 C

2uA

Reverse recovery time Trr

100nS

Reverse direct currentVR=VRRM(kV) IRToil=100 C

5uA

PN Junction capacitance CJ

-

Working temperature Tj

-40~125C

Storage temperature TSTG

-40~125 C

Outline dimension Size: Shape (mm Unit:)

Frequently Bought Together
more
Frequently Bought Together

CUSTOMER REVIEWS

4.6 50 Reviews
Write a review
$0.00 $0.00
Please choose options.Back to top
Close
$0.00 $0.00
Message Us