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High voltage electronic high voltage diode HV200F06] Scott 2CL2FE 200mA 6kV high voltage silicon stack

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High voltage electronic high voltage diode HV200F06  Scott 2CL2FE 200mA 6kV high voltage silicon stack
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  • Description
  • Reviews(200)
Specifications
brand HVGT

HV200F06 parameter table Datasheet:

Model Type

HV200F06

Manufacturer Manufacturer

HVGT

Reverse repetitive peak voltage VRRM

6.0kV

Forward average cuRRent IF(AV)

200mA

Forward non repetitive surge current IFSM

10A

Positive peak voltage IF=10 (mA) VFM

18V

Reverse direct currentVR=VRRM(kV) IRTa=25 C

2.0uA

Reverse recovery time Trr

100nS

Reverse direct currentVR=VRRM(kV) IRToil=100 C

15uA

PN Junction capacitance CJ

15pF

Working temperature Tj

-40~125C

Storage temperature TSTG

-40~125 C

Outline dimension Size: Shape (mm Unit:)

Average rating: 4.0 based on 200 reviews
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