![[HVGT direct] ultra high frequency high voltage diode CL03-10F high voltage silicon 300mA10kV80nS](http://ueeshop.ly200-cdn.com/u_file/UPBI/UPBI264/1610/products/18/1f83f70eaa.jpg?x-oss-process=image/quality,q_100/resize,m_lfit,h_1000,w_1000)
| brand | HVGT |
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Device profile |
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[device name] |
High voltage diode |
[production brand] |
HVGT |
|
[device model] |
CL03-10F |
[green note] |
RoHS |
|
[device package] |
DO-721 |
[sales note] |
Original authentic, brand marketing. |
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Electrical characteristics |
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Project |
Condition |
Symbol |
Data |
Company |
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Reverse repetitive peak voltage |
|
VRRM |
10 |
KV |
|
Positive average current |
25 degrees C |
IF (AV) |
300 |
MA |
|
Positive non repetitive surge current |
Sine 1/2 (60Hz) 25 degrees C (8.3mS) |
IFSM |
15 |
A |
|
Positive peak voltage |
VFIF |
VFM |
25 |
V |
|
Reverse direct current |
IRVRRM25 ~ C |
IR1 |
5 |
UA |
|
Reverse direct current |
IRVRRM100 degree C |
IR2 |
50 |
UA |
|
Reverse recovery time |
IF=0.5IRI.RI.RR=0.25IR |
TRR |
80 |
NS |
|
P/N junction capacitance |
At 1 V, MHzR= 0 T andA= 25 degrees C |
CJ |
15 |
PF |
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Operating temperature range |
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TJ |
-40~125 |
C |
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Storage temperature range |
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TSTG |
-40~125 |
C |
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