B120MN00SNG EliteSiC™ Power Module by ON Semiconductor
At the cutting edge of power electronics innovation, ON Semiconductor proudly presents the NXH40B120MN00SNG EliteSiC™ Silicon Carbide (SiC) Power Module. Engineered specifically for high-performance applications such as Electric Vehicle (EV) chargers, this module sets reliability.
Key Specifications & Highlights
- Voltage Rating: 1200 V
- Topology: Dual Independent Boost Chopper
- Technology: Silicon Carbide (SiC) MOSFETs
- Package: Standard Low-Stress Lamination Technology
- Target Application: High-Power EV Charging Stations
Why Choose EliteSiC™ Technology?
Silicon Carbide represents a significantNXH40B120MN00SNG** leverages this advanced semiconductor material to deliver:
Switching Speeds:** Operate at frequencies that enable smaller passive components and higher power density.
demanding duty cycles.
🔧 Superior Thermal Management
Engineered with a low inductance stray path design and enhanced thermal interface materials, the module ensures:
- Lower operating temperatures
- Extended device lifetime
- Improved long-term stability
🔌 Optimized for EV Charging Infrastructure
This dual-boost module is topologically tailored for high-power factor correction (PFC) stages in EV chargers, delivering:
- High Power Density: Allows for compact charger designs without compromising reliability.
- Scalable Architecture: Enables manufacturers from 20kW to ultra-fast DC chargers (>350kW).
- Robust Operation: Exhibits strong dv/dt immunity for EMI reduction in noisy environments.
Core Features
- Low Vgs(th) & Gate Charge: Balanced switching performance with high noise immunity.
- Integrated Anti-Parallel Diodes: Designed for low reverse-recovery and enhanced system efficiency.
- ISO 17025 Qualified: Guaranteed via rigorous Automotive-AECQ101 and Industrial-Grade HTRB testing.
- Extended Power Cycling Capability: Proven longevity under thermal stress typical in industrial applications.
Applications Enabled
- AC Level 2 and DC Fast Charging Stations (DC 450V architecture)
- Solar inverters & UPS systems where power density is critical
- Telecom rectifiers and advanced power conversion platforms
Technical Summary
| Feature | Specification | |--------------------------|------------------------------------| | Drain-Source Voltage | 1200 V | | Continuous Current (Tc=80°C)| 40 A per switch | | Module Topology | Dual Boost | | Isolation | | Operating Temp. Range | -40°C to +150°C |
Why Partner with ON Semiconductor for Your Power Design?
The NXH40B120MN00SNG reflects ON Semiconductor's commitment to SiC leadership. By choosing our EliteSiC™ module, you gain:
- Comprehensive Technical Support: Access to application notes, evaluation boards, and simulation models.
- Supply Chain Reliability: Produced in IATF 16949-certified facilities for uninterrupted automotive-grade sourcing.
- Future-Proof Systems: Integration with the extensive EliteSiC™ ecosystem (e.g., gate driver ICs).
Elevate your next EV charging system to peak performance with state-of-the-art power. Reach out to an onsemi.com today to request samples and unleash the power of silicon carbide.
