Home > Electronic Components > HIGH VOLTAGE DIODES > [original HVGT] high voltage diode HV500F08 high pressure silicon heap 8kV ESJC50F08 500mA
  • [original HVGT] high voltage diode HV500F08 high pressure silicon heap 8kV ESJC50F08 500mA
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  • [original HVGT] high voltage diode HV500F08 high pressure silicon heap 8kV ESJC50F08 500mA

[original HVGT] high voltage diode HV500F08 high pressure silicon heap 8kV ESJC50F08 500mA

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[original HVGT] high voltage diode HV500F08 high pressure silicon heap 8kV ESJC50F08 500mA
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  • [original HVGT] high voltage diode HV500F08 high pressure silicon heap 8kV ESJC50F08 500mA
  • [original HVGT] high voltage diode HV500F08 high pressure silicon heap 8kV ESJC50F08 500mA
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  • [original HVGT] high voltage diode HV500F08 high pressure silicon heap 8kV ESJC50F08 500mA
  • Description
brand HVGT

Device profile

[device name]

High voltage diode

[production brand]

HVGT

[device model]

HV500F08

[green note]

RoHS

[device package]

DO-721

[sales note]

Original authentic, brand marketing.

Electrical characteristics

Project

Condition

Symbol

Data

Company

Reverse repetitive peak voltage

 

VRRM

8.0

KV

Positive average current

25 degrees C

IF (AV)

500

MA

Positive non repetitive surge current

Sine 1/2 (60Hz) 25 degrees C (8.3mS)

IFSM

30

A

Positive peak voltage

VFIF

VFM

14

V

Reverse direct current

IRVRRM25 ~ C

IR1

5

UA

Reverse direct current

IRVRRM100 degree C

IR2

50

UA

Reverse recovery time

IF=0.5IRI.RI.RR=0.25IR

TRR

100

NS

P/N junction capacitance

At 1 V, MHzR= 0 T andA= 25 degrees C

CJ

15

PF

Operating temperature range

 

TJ

-40~125

C

Storage temperature range

 

TSTG

-40~125

C

 

 

,

 

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