Home > Electronic Components > HIGH VOLTAGE DIODES > [Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A
  • [Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A
  • [Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A
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  • [Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A
  • [Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A

[Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A

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[Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A
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  • [Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A
  • [Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A
  • [Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A
  • [Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A
1/1
  • [Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A
  • [Scott] electronic high-voltage silicon stack 2CLG10KV/1A high voltage silicon rectifier stack 2CLG10KV1A
  • Description

2CLG10KV/1Aparameter table Datasheet:

Model Type

2CLG10KV/1A

Manufacturer Manufacturer

HVGT

Reverse repetitive peak voltage VRRM

10kV

Forward average cuRRent IF(AV)

1.0A

Forward non repetitive surge current IFSM

30A

Positive peak voltage IF=10 (mA) VFM

12V

Reverse direct currentVR=VRRM(kV) IRTa=25 C

5.0uA

Reverse recovery time Trr

80nS

Reverse direct currentVR=VRRM(kV) IRToil=100 C

50uA

PN Junction capacitance CJ

-

Working temperature Tj

-40~125C

Storage temperature TSTG

-40~125 C

Outline dimension Size: Shape (mm Unit:)

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