Home > Electronic Components > HIGH VOLTAGE DIODES > [HVGT] high pressure silicon heap 2CL60KV/0.1A high pressure silicon heap 60kV 100mA
  • [HVGT] high pressure silicon heap 2CL60KV/0.1A high pressure silicon heap 60kV 100mA
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  • [HVGT] high pressure silicon heap 2CL60KV/0.1A high pressure silicon heap 60kV 100mA

[HVGT] high pressure silicon heap 2CL60KV/0.1A high pressure silicon heap 60kV 100mA

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[HVGT] high pressure silicon heap 2CL60KV/0.1A high pressure silicon heap 60kV 100mA
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  • [HVGT] high pressure silicon heap 2CL60KV/0.1A high pressure silicon heap 60kV 100mA
  • [HVGT] high pressure silicon heap 2CL60KV/0.1A high pressure silicon heap 60kV 100mA
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  • [HVGT] high pressure silicon heap 2CL60KV/0.1A high pressure silicon heap 60kV 100mA
  • Description

2CL60KV/0.1Aparameter table Datasheet:

Model Type

2CL60KV/0.1A

Manufacturer Manufacturer

HVGT

Reverse repetitive peak voltage VRRM

60KV

Forward average cuRRent IF(AV)

0.1A

Forward non repetitive surge current IFSM

3.0A

Positive peak voltage IF=10 (mA) VFM

68V

Reverse direct currentVR=VRRM(kV) IRTa=25 C

5.0uA

Reverse recovery time Trr

-

Reverse direct currentVR=VRRM(kV) IRToil=100 C

50uA

PN Junction capacitance CJ

-

Working temperature Tj

-40~125C

Storage temperature TSTG

-40~125 C

Outline dimension Size: Shape (mm Unit:)

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